Effect of Annealing Temperatures on Surface Morphology and Electrical Properties of Titanium Dioxide Thin Films Prepared By Sol Gel Method

Abstract

The effects of annealing temperatures on the surface morphology and the electrical properties of titanium dioxide (TiO₂) thin films prepared by the sol-gel method were studied. TiO₂ thin films were deposited on silicon substrates using the spin coater technique. By varying the parameters of the annealing temperatures, The TiO2 thin films were deposited onto silicon substrates. Characterization was done using current-voltage (I-V) measurement and scanning electron microscopy (SEM). TiO2 thin films were annealed at 300°C, 350°C, 400°C, 450°C and 500°C. The result indicated that the electrical properties of the TiO₂ thin films were changed with the increasing of the annealing temperature. As the annealing temperature increased, the resistivity decreased. The SEM investigation showed that the grain size of the TiO₂ increased with higher annealing temperatures. The results showed that surface porosity, electrical properties and surface morphology of TiO₂ could be affected by changing the annealing temperature.